NORMAL TEMPERATURE BONDING DEVICE AND NORMAL TEMPERATURE BONDING METHOD

The purpose of the present invention is to suppress adhering of impurities to substrates and intermediate layers during normal temperature bonding of substrates. This normal temperature bonding device is provided with: a vacuum vessel (1); a first holding mechanism (3a) that holds a first substrate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KINOUCHI Masato, GOTO Takayuki, UTSUMI Jun, SUZUKI Takenori, TSUNO Takeshi, IDE Kensuke
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS SOLDERING OR UNSOLDERING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WELDING WORKING BY LASER BEAM WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	The purpose of the present invention is to suppress adhering of impurities to substrates and intermediate layers during normal temperature bonding of substrates. This normal temperature bonding device is provided with: a vacuum vessel (1); a first holding mechanism (3a) that holds a first substrate (4); a second holding mechanism (3b) that holds a second substrate (4); a beam source (6) that outputs an activated beam that irradiates surfaces to be bonded of the first substrate (4) and the second substrate (4); and a pressure bonding mechanism (5) that aligns and bonds the surfaces to be bonded of both substrates (4) to which a target material has been made to adhere. At least one of the vacuum vessel (1), the first and second holding mechanisms (3a, 3b), the beam source (6) and the pressure bonding mechanism (5) is formed from or covered with a first material that is not easily sputtered by the activated beam (6) or that does not inhibit the function of devices formed by bonding the two substrates (4) even when present on the surfaces to be bonded.