RADIOGRAPHIC IMAGING ARRAY FABRICATION PROCESS FOR METAL OXIDE THIN-FILM TRANSISTORS WITH REDUCED MASK COUNT

RADIOGRAPHIC IMAGING ARRAY FABRICATION PROCESS FOR METAL OXIDE THIN-FILM TRANSISTORS WITH REDUCED MASK COUNT

Embodiments of radiographic imaging systems; radiography detectors and methods for using the same; and/or fabrication methods therefore can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric conversion element coupled to a thin-film switching...

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Bibliographische Detailangaben
Hauptverfasser: TREDWELL, TIMOTHY, J, CHANG, JEFF, HSIN, MRUTHYUNJAYA, RAVI, K
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Zusammenfassung:Embodiments of radiographic imaging systems; radiography detectors and methods for using the same; and/or fabrication methods therefore can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric conversion element coupled to a thin-film switching element. In certain exemplary embodiments, thin-film switching element is a metal oxide (e.g., a-IGZO) TFT manufactured using a reduce photolithography mask counts. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT that includes reduced lower alignment tolerances between TFT electrodes. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT including a reduced thickness active layer.