MONOCRYSTALLINE GALLIUM OXIDE AND MONOCRYSTALLINE GALLIUM OXIDE SUBSTRATE

MONOCRYSTALLINE GALLIUM OXIDE AND MONOCRYSTALLINE GALLIUM OXIDE SUBSTRATE

Provided is a gallium oxide single crystal and a gallium oxide single crystal substrate that can improve the luminous efficiency. In a gallium oxide single crystal 13, the dislocation density is less than or equal to 3.5 × 10 6 / cm 2 . The gallium oxide single crystal 13 is manufactured by the EFG...

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Bibliographische Detailangaben
Hauptverfasser: AIDA, HIDEO, NAKAMURA, MOTOICHI, NISHIGUCHI, KENGO, KOYAMA, KOUJI, IKEJIRI, KENJIRO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Provided is a gallium oxide single crystal and a gallium oxide single crystal substrate that can improve the luminous efficiency. In a gallium oxide single crystal 13, the dislocation density is less than or equal to 3.5 × 10 6 / cm 2 . The gallium oxide single crystal 13 is manufactured by the EFG method. Further, the seed touch temperature in the EFG method is greater than or equal to 1930 degrees centigrade and less than or equal to 1950 degrees centigrade. A neck part 13a of the gallium oxide single crystal 13 is less than or equal to 0.8 mm. A gallium oxide single crystal substrate 21 is made of the gallium oxide single crystal 13.