TWO-STEP METHOD FOR JOINING A SEMICONDUCTOR TO A SUBSTRATE WITH CONNECTING MATERIAL BASED ON SILVER

TWO-STEP METHOD FOR JOINING A SEMICONDUCTOR TO A SUBSTRATE WITH CONNECTING MATERIAL BASED ON SILVER

The invention relates to a method for joining a semiconductor (20) to a substrate (10), comprising the following steps: *applying a first paste layer (1) of a sintering paste to the substrate; *heating and compressing the first paste layer to form a first sintered layer; *applying a second paste lay...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: FRUEH, CHRISTIANE, HERBOTH, THOMAS, GUENTHER, MICHAEL
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention relates to a method for joining a semiconductor (20) to a substrate (10), comprising the following steps: *applying a first paste layer (1) of a sintering paste to the substrate; *heating and compressing the first paste layer to form a first sintered layer; *applying a second paste layer (2) of a sintering paste to the first sintered layer and arranging a semiconductor (20) on the second paste layer; *heating and compressing the second paste layer (2) to form a second sintered layer. The invention further relates to a semiconductor component produced by means of the method.