Semiconductor device with an electric field modification structure, and corresponding integrated circuit, fabrication method and method of increasing breakdown voltage

Semiconductor device with an electric field modification structure, and corresponding integrated circuit, fabrication method and method of increasing breakdown voltage

A semiconductor device having a dielectric layer (36) adjoining a semiconductor layer (10), and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an electric field vector at a region of an interface betwe...

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Bibliographische Detailangaben
Hauptverfasser: MCAULIFFE, DONAL P, COYNE, EDWARD JOHN, WHISTON, SEAMUS P, O HANNAIDH, BREANDAN POL OG, LANE, WILLIAM ALAN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor device having a dielectric layer (36) adjoining a semiconductor layer (10), and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an electric field vector at a region of an interface between the semiconductor layer and the dielectric layer to be modified. The field modification structure may comprise a buried region (100, 230, 250, 330) having a boundary part (102, 232, 252) substantially aligned with a boundary part (43) of a RESURF structure such as a field plate structure (42).