SELF-ALIGNED STACK GATE STRUCTURE FOR USE IN A NON-VOLATILE MEMORY ARRAY

SELF-ALIGNED STACK GATE STRUCTURE FOR USE IN A NON-VOLATILE MEMORY ARRAY

A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions, with each active region having an axis in a first direction. A first insulating material is between each stack gate structure in the second d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SU, CHIEN-SHENG, CUEVAS, LIZ, WEGE, STEPHAN, BERNARDI, CECILE, MIRIDI, NADIA, GUYOT, FLORENCE, TADAYONI, MANDANA, DO, NHAN, OM'MANI, HENRY, CHEN, YUEH-HSIN, LIU, XIAN, TOREN, WILLEM-JAN, METZGER-BRUECKL, GERHARD
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions, with each active region having an axis in a first direction. A first insulating material is between each stack gate structure in the second direction perpendicular to the first direction. Each stack gate structure has a second insulating material over the active region, a charge holding gate over the second insulating material, a third insulating material over the charge holding gate, and a first portion of a control gate over the third insulating material. A second portion of the control gate is over the first portion of the control gate and over the first insulating material adjacent thereto and extending in the second direction. A fourth insulating material is over the second portion of the control gate.