Non-volatile memory device
The invention concerns a memory device comprising: a first memory cell comprising a first resistive non-volatile data storage element programmable to store a first bit of data; and a second memory cell comprising a second resistive non-volatile data storage element programmable to store a second bit...
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | The invention concerns a memory device comprising: a first memory cell comprising a first resistive non-volatile data storage element programmable to store a first bit of data; and a second memory cell comprising a second resistive non-volatile data storage element programmable to store a second bit of data; wherein said first resistive element is configured to have a first data retention duration, and said second resistive element is configured to have a second data retention duration different from said first data retention duration. |
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