Light emitting device and lighting apparatus including the same

The invention concerns a light emitting device that includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. It includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer. A first electrode layer is disposed between the second conductivity type semiconductor layer and the second electrode. A second electrode layer is disposed between portions of the first electrode layer spaced from each other at opposite sides of the mesa etching region.