Apparatus for processing a semiconductor workpiece

According to the invention there is an apparatus (10) for processing a semiconductor workpiece (24) including: a first chamber (14) having a first plasma production source (16) and a first gas supply (12) for introducing a supply of gas into the first chamber; a second chamber (22) having a second plasma production source (30) and a second gas supply (34) for introducing a supply of gas into the second chamber, the second gas supply being independently controllable of the first gas supply; a workpiece support (26) positioned in the second chamber; and a plurality of gas flow pathway defining elements for defining a gas flow pathway in the vicinity of the workpiece when positioned on the workpiece support, wherein the gas flow path defining elements include at least one wafer edge region protection element (28) for protecting the edge of the wafer and/or a region outwardly circumjacent to the edge of the wafer, and at least one auxiliary element (36) spaced apart from the wafer edge region protection element to define the gas flow pathway.