MULTI-BIT MAGNETIC TUNNEL JUNCTION MEMORY AND METHOD OF FORMING THE SAME

MULTI-BIT MAGNETIC TUNNEL JUNCTION MEMORY AND METHOD OF FORMING THE SAME

A spin-torque transfer (STT) magnetic tunnel junction (MTJ) memory includes a unitary fixed magnetic layer, a magnetic barrier layer on the unitary fixed magnetic layer, a free magnetic layer having a plurality of free magnetic islands on the magnetic barrier layer, and a cap layer overlying the fre...

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Bibliographische Detailangaben
Hauptverfasser: WU, WENQING, LI, SEAN, ZHU, XIAOCHUN, KANG, SEUNG H, YUEN, KENDRICK H, MADALA, RAGHU SAGAR
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A spin-torque transfer (STT) magnetic tunnel junction (MTJ) memory includes a unitary fixed magnetic layer, a magnetic barrier layer on the unitary fixed magnetic layer, a free magnetic layer having a plurality of free magnetic islands on the magnetic barrier layer, and a cap layer overlying the free magnetic layer. Also a method of forming an STT-MTJ memory.