Method of manufacturing a semiconductor device
A semiconductor device is disclosed. The semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AIN), and a device layer disposed on the initial buffer layer and including a semiconductor compound, wherein there is...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A semiconductor device is disclosed. The semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AIN), and a device layer disposed on the initial buffer layer and including a semiconductor compound, wherein there is no SiN between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer. |
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