IMPROVED INTERFACE BETWEEN A I/III/VI2 LAYER AND A BACK CONTACT LAYER IN A PHOTOVOLTAIC CELL

IMPROVED INTERFACE BETWEEN A I/III/VI2 LAYER AND A BACK CONTACT LAYER IN A PHOTOVOLTAIC CELL

In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficia...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PARISSI, Ludovic, ANGLE, Stéphanie
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.