Semiconductor device with a chip bonded to a lead frame with a sintered Ag layer, wherein a resin fillet covers the sintered Ag layer and a part of a side surface of the chip and wherein chip electrodes are bonded to leads, as well as method of manufacturing the same

A semiconductor device (20, 24, 29, 32, 35, 38) includes a die pad (6), a wide gap semiconductor chip (SiC or GaN) (1) mounted on the die pad (6), a porous first sintered Ag layer (16) bonding the die pad (6) and the chip (1), and a reinforcing resin portion (17) covering a surface of the first sint...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YATO, YUICHI, NAKAJO, TAKUYA, HOZOJI, HIROSHI, ARAI, KATSUO, KAJIWARA, RYOICHI, OKA, HIROI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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