Method of forming a high electron mobility semiconductor device

Method of forming a high electron mobility semiconductor device

In an embodiment, a semiconductor device is formed by a method that includes, providing a base substrate of a first semiconductor material, and forming a layer that is one of SiC or a III-V series material on the base substrate. In a different embodiment, the base substrate may be one of silicon, po...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PARSEY, JR, JOHN, SALIH, ALI
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In an embodiment, a semiconductor device is formed by a method that includes, providing a base substrate of a first semiconductor material, and forming a layer that is one of SiC or a III-V series material on the base substrate. In a different embodiment, the base substrate may be one of silicon, porous silicon, or porous silicon with nucleation sites formed thereon, or silicon in a (111) plane.