CMOS gas sensor and method for manufacturing the same

CMOS gas sensor and method for manufacturing the same

A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Bühler, Johannes, Kuemin, Cyrill
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.