Flash memory with BIAS voltage for word line/row driver

A memory device includes a word line driver circuit 116, a write voltage generator for providing a write voltage to the word line driver during a write operation to memory cells coupled to the word line driver circuit, and a write bias generator 106 including an output node for providing a write bia...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sanjeevarao, Padmaraj, Choy, Jon S
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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