Flash memory with BIAS voltage for word line/row driver
A memory device includes a word line driver circuit 116, a write voltage generator for providing a write voltage to the word line driver during a write operation to memory cells coupled to the word line driver circuit, and a write bias generator 106 including an output node for providing a write bia...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A memory device includes a word line driver circuit 116, a write voltage generator for providing a write voltage to the word line driver during a write operation to memory cells coupled to the word line driver circuit, and a write bias generator 106 including an output node for providing a write bias voltage that is different from the write voltage to the word line driver circuit during a write operation to memory cells coupled to the word line driver circuit. The write bias voltage is used to reduce current drawn by the word line driver circuit from the write voltage generator during a write operation to memory cells coupled to the word line driver circuit. |
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