LATERAL SINGLE-PHOTON AVALANCHE DIODE AND METHOD OF PRODUCING A LATERAL SINGLE-PHOTON AVALANCHE DIODE

A lateral single-photon avalanche diode comprises a semiconductor body (1) of a first type of conductivity which includes a base layer (10), a first further layer (11) on the base layer and a second further layer (12) on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. Thereby, the high electric field region or avalanche region is essentially confined to the first further layer (11). A doped region (5) of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals (3, 4) are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench (19) with doped polysilicon.