APPARATUS, METHOD AND PROGRAM FOR MANUFACTURING NITRIDE FILM

[Object] A refractive index and/or uniformity of distribution of a deposition rate of a nitride film falls within a predetermined numerical range, and stress of the nitride film is well controlled. [Solution] The invention provides a nitride film manufacturing apparatus 100 that forms a nitride film...

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Bibliographische Detailangaben
Hauptverfasser:	MURAKAMI, SHOICHI, HATASHITA, MASAYASU
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	[Object] A refractive index and/or uniformity of distribution of a deposition rate of a nitride film falls within a predetermined numerical range, and stress of the nitride film is well controlled. [Solution] The invention provides a nitride film manufacturing apparatus 100 that forms a nitride film 70 (70a) on a substrate 20 provided in a chamber 30 by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus 100 includes a controller 39 for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress (including a case where the stress is zero) of the nitride film 70 (70a), based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film 70 (70a).