Strained semiconductor device
A semiconductor device comprising: a semiconductor body (102) formed from a first semiconductor material; a first gate electrode (104a) disposed over an upper surface of the semiconductor body; a first sidewall spacer (110a) disposed along a sidewall of the first gate electrode; a second gate electr...
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A semiconductor device comprising: a semiconductor body (102) formed from a first semiconductor material; a first gate electrode (104a) disposed over an upper surface of the semiconductor body; a first sidewall spacer (110a) disposed along a sidewall of the first gate electrode; a second gate electrode (104b) disposed over an upper surface of the semiconductor body; a second sidewall spacer (110b) disposed along a sidewall of the second gate electrode; a first region of a second semiconductor material (116a) embedded within the semiconductor body adjacent the first sidewall spacer; and a second region of the second semiconductor material (116b) embedded within the semiconductor body adjacent the second sidewall spacer, the second region laterally spaced from the first region without any intervening isolation material. |
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