ANALYSIS CIRCUIT FOR FIELD EFFECT TRANSISTORS HAVING A DISPLACEABLE GATE STRUCTURE

ANALYSIS CIRCUIT FOR FIELD EFFECT TRANSISTORS HAVING A DISPLACEABLE GATE STRUCTURE

An analysis circuit for a field effect transistor having a displaceable gate structure, includes a measurement circuit coupled between a supply voltage connection of the analysis circuit and a drain connection of the field effect transistor and configured to output a measurement signal that is depen...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HENRICI, Fabian, BUHMANN, Alexander
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS
INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
MEASURING
MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK
MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE
MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
PHYSICS
TARIFF METERING APPARATUS
TESTING
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Beschreibung
Zusammenfassung:An analysis circuit for a field effect transistor having a displaceable gate structure, includes a measurement circuit coupled between a supply voltage connection of the analysis circuit and a drain connection of the field effect transistor and configured to output a measurement signal that is dependent on the current strength of a current flowing through the field effect transistor to a measurement connection.