NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE

NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE

The nitride semiconductor laser is provided, which enables the reduction of drive voltage while reducing the degradation of optical confinement. In the semiconductor region 19, the active layer of the light emitting layer, the first cladding region 21, and the second cladding region 23 are provided...

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Bibliographische Detailangaben
Hauptverfasser: UENO, MASAKI, SUMITOMO, TAKAMICHI, YOSHIZUMI, YUSUKE, YANASHIMA, KATSUNORI, NAKAJIMA, HIROSHI, KYONO, TAKASHI, ENYA, YOHEI, TASAI, KUNIHIKO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The nitride semiconductor laser is provided, which enables the reduction of drive voltage while reducing the degradation of optical confinement. In the semiconductor region 19, the active layer of the light emitting layer, the first cladding region 21, and the second cladding region 23 are provided on the primary surface 17a. The second cladding layer 23 comprises the first p-type III-nitride semiconductor layer 27 and the second p-type III-nitride semiconductor layer 29. The first p-type III-nitride semiconductor layer 27 comprises an InAlGaN layer, and the second p-type III-nitride semiconductor layer 27 comprises a semiconductor different from this InAlGaN layer. This InAlGaN layer includes anisotropic strain. The first p-type III-nitride semiconductor layer 27 is provided between the active layer 25 and the second p-type III-nitride semiconductor layer 29. The resistivity p29 of the second p-type III-nitride semiconductor layer 29 is lower than the resistivity p27 of the first p-type III-nitride semiconductor layer 27.