Improved method of metal plating semiconductors

A metal underlayer is selectively plated on semiconductor wafers immediately followed by plating copper on the metal underlayer using a low internal stress copper plating bath. Additional metallization may be done to build up the metal layers using conventional metal plating baths and methods to for...

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Bibliographische Detailangaben
Hauptverfasser:	HAMM, GARY, KARAYA JR., NARSMOUL, WEI, LINGYUN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A metal underlayer is selectively plated on semiconductor wafers immediately followed by plating copper on the metal underlayer using a low internal stress copper plating bath. Additional metallization may be done to build up the metal layers using conventional metal plating baths and methods to form current tracks. Formation of metal silicides is avoided. Good adhesion of the metals to the semiconductors is achieved. The metalized semiconductors may be used in the manufacture of photovoltaic devices.