LATERAL-TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

LATERAL-TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

A lateral semiconductor device having an SOI (Silicon on Insulator) substrate is provided. The lateral semiconductor device includes a semiconductor layer including a body region (107) on a buried oxide layer (200), and a drift region (109) that contacts with a side surface of the body region (107)....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: EGUCHI, Hiroomi, OKAWA, Takashi, ONOGI, Atsushi
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A lateral semiconductor device having an SOI (Silicon on Insulator) substrate is provided. The lateral semiconductor device includes a semiconductor layer including a body region (107) on a buried oxide layer (200), and a drift region (109) that contacts with a side surface of the body region (107). Further, the lateral semiconductor device has a first trench that is recessed, toward the buried oxide layer (200), in an interface between the body region (107) and the drift region (109) so as not to reach the buried oxide layer (200).