Growth layer for photovoltaic applications and method of producing the same

Growth layer for photovoltaic applications and method of producing the same

Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.

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Bibliographische Detailangaben
1. Verfasser: MCSPORRAN, NEIL
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.