Materials, systems and methods for optoelectronic devices

A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is ovei at least a poition of the integrated circuit, and a second optically sensiti...

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Hauptverfasser:	JOHNSTON, KEITH WILLIAM, LEVINA, LARISSA, FIFE, KEITH GLEN, SARGENT, EDWARD HARTLEY, CLIFFORD, JASON PAUL, ADAMS, IAN STUART, DELLA NAVE, PIERRE HENRI RENE, TIAN, HUI, AGHAJANIAN, ARTHUR, KLEM, ETHAN JACOB DUKENFIELD, TANG, JIANG, OLIVER, STEVEN DAVID, SNELGROVE, WILLIAM MARTIN, HOOGLAND, SJOERD, IVANOV, IGOR CONSTANTIN, BRADING, MICHAEL CHARLES, KONSTANTATOS, GERASIMOS, HINDS, SEAN O'REILLY, DONG, MILTON, MACNEIL, DEAN DELEHANTY, FISCHER, ARMIN, CHIK, RAYMOND, LEE, JEES JAN YOUNG, HUNTER, KEVIN, PATTANTYUS-ABRAHAM, ANDRAS GEZA
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is ovei at least a poition of the integrated circuit, and a second optically sensitive layer is over the fust optically sensitive layer Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers The signal is related to the number of photons received by the respective optically sensitive layer