OPTICAL SEMICONDUCTOR AND PRODUCTION METHOD THEREFOR, AS WELL AS OPTICAL SEMICONDUCTOR DEVICE, PHOTOCATALYST, HYDROGEN-GENERATING DEVICE AND ENERGY SYSTEM

The method for producing the optical semiconductor of the present invention includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mi...

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Bibliographische Detailangaben
Hauptverfasser:	HATO, Kazuhito, TOKUHIRO, Kenichi, TANIGUCHI, Noboru, NOMURA, Takaiki, SUZUKI, Takahiro, TAMURA, Satoru, MIYATA, Nobuhiro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	The method for producing the optical semiconductor of the present invention includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mixture and a nitrogen compound gas; and a washing step of isolating niobium oxynitride from the material obtained through the nitriding step by dissolving chemical species other than niobium oxynitride with a washing liquid. The optical semiconductor of the present invention substantially consists of niobium oxynitride having a crystal structure of baddeleyite and having a composition represented by the composition formula, NbON.