NANOCRYSTALS WITH HIGH EXTINCTION COEFFICIENTS

Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor nanocrystals are disclosed.

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Bibliographische Detailangaben
Hauptverfasser:	WELCH, ERIC, TREADWAY, JOSEPH, CHEN, YONGFEN, TULSKY, ERIC, BARTEL, JOSEPH AUGUST
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor nanocrystals are disclosed.