CONTACT PAD AND METHOD OF MANUFACTURING THE SAME

The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed ove...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GURGANUS, JASON, MIECZKOWSKI, VAN, HAGLEITNER, HELMUT, AGARWAL, ANANT
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process.