SEMICONDUCTOR JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR JUNCTION STRUCTURE

Obtaining a semiconductor bonding structure body that has a superior stress alleviation property, and has a heat resistance property at the same time. A bonding structure body in which a semiconductor element (102) and an electrode (103) are bonded via a solder material, wherein a part (212) that al...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAMURA, TAICHI, FURUSAWA, AKIO, SAKATANI, SHIGEAKI, KITAURA, HIDETOSHI, ISHIMARU, YUKIHIRO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MACHINE TOOLS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRINTED CIRCUITS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	Obtaining a semiconductor bonding structure body that has a superior stress alleviation property, and has a heat resistance property at the same time. A bonding structure body in which a semiconductor element (102) and an electrode (103) are bonded via a solder material, wherein a part (212) that allows bonding has a first intermetallic compound layer (207') that has been formed on the electrode side, a second intermetallic compound layer (208') that has been formed on the semiconductor element side, and a third layer (300) that is constituted by a phase (210) containing Sn and a sticks-like intermetallic compound part (209'), which is sandwiched between the two layers of the first intermetallic compound layer (207') and the second intermetallic compound layer (208'), and the sticks-like intermetallic compound part (209') is interlayer-bonded to both of the first intermetallic compound layer (207') and the second intermetallic compound layer (208').