Semiconductor device and method for producing the same

Semiconductor device and method for producing the same

A semiconductor device satisfies the condition Db ‰¤ (1/3) x Da, in which Da represents a distance between a top surface of a cathode segment (22) and an end of an embedded gate segment (26) facing an anode segment (24), and Db represents a distance between a highest-impurity concentration portion i...

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Hauptverfasser: SHIMIZU, NAOHIRO, YOKOI, SHOJI
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHIMIZU, NAOHIRO
YOKOI, SHOJI
description A semiconductor device satisfies the condition Db ‰¤ (1/3) x Da, in which Da represents a distance between a top surface of a cathode segment (22) and an end of an embedded gate segment (26) facing an anode segment (24), and Db represents a distance between a highest-impurity concentration portion in the embedded gate segment (26) and an end of the cathode segment (22) facing the anode segment (24).
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device and method for producing the same
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