Semiconductor device and method for producing the same
A semiconductor device satisfies the condition Db ¤ (1/3) x Da, in which Da represents a distance between a top surface of a cathode segment (22) and an end of an embedded gate segment (26) facing an anode segment (24), and Db represents a distance between a highest-impurity concentration portion i...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A semiconductor device satisfies the condition Db ¤ (1/3) x Da, in which Da represents a distance between a top surface of a cathode segment (22) and an end of an embedded gate segment (26) facing an anode segment (24), and Db represents a distance between a highest-impurity concentration portion in the embedded gate segment (26) and an end of the cathode segment (22) facing the anode segment (24). |
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