Double layer antireflection coating for silicon based solar cell modules

A silicon wafer-based solar cell with a two-layer antireflective coating (ARC) combines a 10-30nm thick hydrogen containing passivation layer (e.g. Si X N Y :H) with a top layer of Nb 2 O 5 (or Nb X O Y in general) for optimal matching the refractive index of the ARC to cover materials having a refr...

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Bibliographische Detailangaben
1. Verfasser:	RATTUNDE, OLIVER
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	A silicon wafer-based solar cell with a two-layer antireflective coating (ARC) combines a 10-30nm thick hydrogen containing passivation layer (e.g. Si X N Y :H) with a top layer of Nb 2 O 5 (or Nb X O Y in general) for optimal matching the refractive index of the ARC to cover materials having a refractive index of about 1.5 (e.g. glass or EVA, Ethylene Vinyl Acetate). The two-layer ARC can be deposited either by PECVD or by reactive sputtering (PVD) of a Si target with N 2 and/or NH 3 , and the Nb 2 O 5 layer is deposited by reactive sputtering of either a pure Nb target or a conductive Nb 2 Ox (x