SPUTTERING TARGET AND/OR COIL AND PROCESS FOR PRODUCING SAME

Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 µL/cm 2 or less. In dealing with reduction in the hydrogen content of the surface of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NAGATA Kenichi, MAKINO Nobuhito
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 µL/cm 2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.