Semiconductor gas sensor

The sensor (10) has main portion (20) having passivation layer (30) and control electrode (100). A contact area has a first contact region having a formation (112) passing through passivation layer and having a bottom surface with conductive layer. The first contact region has frictional and electri...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	WILBERTZ, CHRISTOPH, FRERICHS, HEINZ-PETER, KOLLETH, TOBIAS
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The sensor (10) has main portion (20) having passivation layer (30) and control electrode (100). A contact area has a first contact region having a formation (112) passing through passivation layer and having a bottom surface with conductive layer. The first contact region has frictional and electrical connections with control electrode via connecting component (130). The second contact region has frictional connection with control electrode via connecting component (140). The connecting component (130) at least partially fills the formation and connects electrode to conductive layer.