METHOD AND DEVICE FOR PRODUCING AN EDGE STRUCTURE OF A SEMICONDUCTOR COMPONENT

The invention relates to a method for producing an edge structure of a semiconductor component, comprising the following steps: providing a semiconductor body (100), wherein the semiconductor body (100) comprises the following: at least two main surfaces (102, 112) each comprising an edge (104, 114), and at least one edge region (106, 116, 126) adjoining at least one of the edges (104, 114); applying a chemical etching agent to at least one edge region (106, 116, 126) of the semiconductor body (100) in a targeted manner while simultaneously rotating the semiconductor body (100), such that the etching effect is limited to the edge region (106, 116, 126). A device for carrying out the method further comprises at least: a rotatable receiving means (205, 206) for receiving the semiconductor body (100); at least one displaceable nozzle device (210) for applying the chemical etching agent; and a controller for setting and monitoring etching parameters in a targeted manner, said parameters being selected from the group consisting of location of application, direction of application, quantity applied, pressure of application, temperature of application of the etching agent, and rotational speed of the semiconductor body (100).