POWDER, SINTERED BODY AND SPUTTERING TARGET, EACH CONTAINING ELEMENTS CU, IN, GA AND SE, AND METHOD FOR PRODUCING THE POWDER

The present invention provides a Cu-In-Ga-Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu-In-...

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Bibliographische Detailangaben
Hauptverfasser:	KASHIWAI, SHIGEO, FUKUZUMI, MASAFUMI, NAMBU, AKIRA, EHIRA, MASAYA
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ALLOYS ARTIFICIAL STONE CASTING CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY LIME, MAGNESIA MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS POWDER METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS TREATMENT OF NATURAL STONE WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	The present invention provides a Cu-In-Ga-Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu-In-Ga-Se compound and/or a Cu-In-Se compound in an amount of 60 mass% or more in total. The powder of the present invention preferably contains an In-Se compound in an amount of 20 mass% or less and/or a Cu-In compound in an amount of 20 mass% or less.