HIGH-SPEED SENSING FOR RESISTIVE MEMORIES

Embodiments of the present disclosure use one or more gain stages to generate an output voltage representing whether a resistive memory element of a data cell stores a high data value or a low data value. In a particular embodiment, an apparatus includes a sensing circuit. The sensing circuit includ...

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Bibliographische Detailangaben

1. Verfasser:	RAO, Hari M
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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