HIGH-SPEED SENSING FOR RESISTIVE MEMORIES

HIGH-SPEED SENSING FOR RESISTIVE MEMORIES

Embodiments of the present disclosure use one or more gain stages to generate an output voltage representing whether a resistive memory element of a data cell stores a high data value or a low data value. In a particular embodiment, an apparatus includes a sensing circuit. The sensing circuit includ...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: RAO, Hari M
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Embodiments of the present disclosure use one or more gain stages to generate an output voltage representing whether a resistive memory element of a data cell stores a high data value or a low data value. In a particular embodiment, an apparatus includes a sensing circuit. The sensing circuit includes a first amplifier stage that is configured to convert a first current through a first resistive memory element of a memory cell into a first single-ended output voltage. A second amplifier stage is configured to amplify the first single-ended output voltage of the first amplifier stage to produce a second single-ended output voltage.