DIAMOND TOOLS

DIAMOND TOOLS

A method comprising: selecting a diamond material; irradiating the diamond material to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the diamond material is selected from the group consisting of: a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TWITCHEN, Daniel, James, PERKINS, Neil, SCARSBROOK, Geoffrey, Alan, GEOGHEGAN, Sarah, Louise
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ADHESIVES
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
DYES
GRINDING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TOOLS FOR GRINDING, BUFFING, OR SHARPENING
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A method comprising: selecting a diamond material; irradiating the diamond material to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the diamond material is selected from the group consisting of: a HPHT diamond material having a total equivalent isolated nitrogen concentration in the range 1 to 600 ppm; a CVD diamond material having a total equivalent isolated nitrogen concentration in the range 0.005 to 100 ppm; and a natural diamond material having a total nitrogen concentration in the range 1 to 2000 ppm, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1×1014 to 1×1021 vacancies/cm−1.