NITRIDE-TYPE SEMICONDUCTOR ELEMENT

A nitride-based semiconductor device of the present invention includes a p-type Al d Ga e N layer 25 whose growing plane is an m -plane and an electrode 30 provided on the p-type Al d Ga e N layer 25. The Al d Ga e N layer 25 includes a pAl d Ga e N contact layer 26 that is made of an Al x Ga y In z N (x+y+z=1, x‰¥0, y>0, z‰¥0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The pAl d Ga e N contact layer 26 includes a body region 26A which contains Mg of not less than 4×10 19 cm -3 and not more than 2×10 20 cm -3 and a high concentration region 26B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×10 21 cm -3 .