PHOTOELECTRIC CONVERSION DEVICE

It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer 2, and a light abso...

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Bibliographische Detailangaben
Hauptverfasser:	INAI, Seiichiro, KAMADA, Rui, USHIO, Shinnosuke, KASAI, Shuichi, OGURI, Seiji, KUBO, Shintaro, NAKAZAWA, Shuji
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer 2, and a light absorbing layer 3 located on the electrode layer 2. The light absorbing layer 3 contains a compound semiconductor. The light absorbing layer 3 comprises a first layer 3A close to the electrode layer 2 and a second layer 3B located on the first layer 3A. The first layer 3A has a void ratio lower than that of the second layer 3B.