Programmable read-only memory device and method of writing the same

Programmable read-only memory device and method of writing the same

A bit cell of the PROM-device comprises a carbon nanotube having a tilted portion comprising a free end and a fixed portion which is to the reference node. The carbon nanotube comprises a structural defect between the fixed and the tilted portion which causes the carbon nanotube to tilt such that th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kropp, Holger, Blawat, Meinolf
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
STATIC STORES
TRANSPORTING
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Beschreibung
Zusammenfassung:A bit cell of the PROM-device comprises a carbon nanotube having a tilted portion comprising a free end and a fixed portion which is to the reference node. The carbon nanotube comprises a structural defect between the fixed and the tilted portion which causes the carbon nanotube to tilt such that the free end is electrically connected to either the storage electrode or an opposite release electrode.