NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A nitride group semiconductor light emitting device includes a substrate (4), n-type and p-type semiconductor layers (11, 12), and an active region (13). The n-type and p-type semiconductor layers (11, 12) are formed on or above the substrate. The active region (13) is interposed between the n-type...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KOTANI, Yasuhisa
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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