NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A nitride group semiconductor light emitting device includes a substrate (4), n-type and p-type semiconductor layers (11, 12), and an active region (13). The n-type and p-type semiconductor layers (11, 12) are formed on or above the substrate. The active region (13) is interposed between the n-type...

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Bibliographische Detailangaben
1. Verfasser:	KOTANI, Yasuhisa
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A nitride group semiconductor light emitting device includes a substrate (4), n-type and p-type semiconductor layers (11, 12), and an active region (13). The n-type and p-type semiconductor layers (11, 12) are formed on or above the substrate. The active region (13) is interposed between the n-type and p-type semiconductor layers (11, 12). The active region (13) includes barrier layers (2) that are included in a multiquantum well structure, and an end barrier layer (15) that has a thickness greater than the barrier layer, and is arranged closest to the p-type semiconductor layer (12). The average thickness of the last two barrier layers that are arranged adjacent to the end barrier layer (15) is smaller than the average thickness of the other barrier layers among the thicknesses of the barrier layers that are included in the multiquantum well structure.