PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE

Abase conductive member (207) is formed on a surface and in a hole section (205) of a substrate (201), and a resist (208) is formed on a part of the base conductive member (207) in which a conductive layer (209, 210) is not to be formed. The conductive layer (209, 210) is formed on a part except for...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SAITO, Daishiro, KAI, Takayuki, YAMAMOTO, Daisuke, MURAGISHI, Isao, KOIWASAKI, Takeshi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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