PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE

Abase conductive member (207) is formed on a surface and in a hole section (205) of a substrate (201), and a resist (208) is formed on a part of the base conductive member (207) in which a conductive layer (209, 210) is not to be formed. The conductive layer (209, 210) is formed on a part except for...

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Bibliographische Detailangaben
Hauptverfasser:	SAITO, Daishiro, KAI, Takayuki, YAMAMOTO, Daisuke, MURAGISHI, Isao, KOIWASAKI, Takeshi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Abase conductive member (207) is formed on a surface and in a hole section (205) of a substrate (201), and a resist (208) is formed on a part of the base conductive member (207) in which a conductive layer (209, 210) is not to be formed. The conductive layer (209, 210) is formed on a part except for the part in which the resist (208) has been formed, and a mask metal (212) is formed on the conductive layer (209, 210). Then, the resist (208) is removed, and the base conductive member (207) is etched using the mask metal (212) as a mask to form the conductive layer (209, 210) into a predetermined shape.