Nitride semiconductor light emitting device

Nitride semiconductor light emitting device

Provided is a nitride semiconductor light emitting device (10) including: a light emitting structure having a p-type nitride semiconductor layer (16), an n-type nitride semiconductor layer (14), and an active layer (15) formed therebetween; p-side and n-side electrodes (19,18) respectively electrica...

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Bibliographische Detailangaben
Hauptverfasser: SHIM, HYUN WOOK, SOHN, YU RI, SHIN, DONG IK, KIM, YOUNG SUN, LEE, DONG JU, ASAI, MAKOTO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Provided is a nitride semiconductor light emitting device (10) including: a light emitting structure having a p-type nitride semiconductor layer (16), an n-type nitride semiconductor layer (14), and an active layer (15) formed therebetween; p-side and n-side electrodes (19,18) respectively electrically connected to the p-type nitride semiconductor layer (16) and the n-type nitride semiconductor layer (14); and a contact layer (17) positioned between the p-type nitride semiconductor layer (16) and the p-side electrode (19), and including a first p-type nitride layer (17a) having a first impurity concentration to form ohmic contact with the p-side electrode (19) and a second p-type nitride layer (17b) having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.