Semiconductor device with contact pad stack

The semiconductor device comprises a semiconductor body carrying a dielectric (3), in which an upper metal layer (21) and a lower metal layer are embedded. An opening (4) in the dielectric (3) uncovers an area (20) comprising a contact area (2). A plurality of vias (6) are arranged below a frame area (5) bordering the contact area (2) and connect the upper metal layer and the lower metal layer. The vias are arranged in such a fashion that any straight line (s1, s2, s3) starting from the portion of the dielectric that is present between the opening and the lower metal layer passes the upper metal layer, the lower metal layer or at least one of the vias. The vias thus stop the linear extension of a crack propagating in the dielectric (3) in any lateral direction.