Semiconductor Nanoparticle Production Method, Semiconductor Nanoparticle, and Phosphor Using the Same

A method of producing a semiconductor nanoparticle of the present invention includes a core formation step of heating a first solution including group 13 element-containing fatty acid salt, a group 13 element-containing halide, and alkali metal amide to obtain a nanoparticle core made of a group 13...

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Bibliographische Detailangaben
1. Verfasser:	RYOWA, TATSUYA
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH DYES INORGANIC CHEMISTRY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method of producing a semiconductor nanoparticle of the present invention includes a core formation step of heating a first solution including group 13 element-containing fatty acid salt, a group 13 element-containing halide, and alkali metal amide to obtain a nanoparticle core made of a group 13 element-containing nitride, and a shell formation step of heating a second solution including the nanoparticle core, group 13 element-containing fatty acid salt, and alkali metal amide to obtain a semiconductor nanoparticle (10) having the nanoparticle core (11) covered with a shell layer (12) made of a group 13 element-containing nitride.